MSA-0470 cascadable silicon bipolar mmic amplifer data sheet features ? cascadable 50 gain block ? 3 db bandwidth: dc to 4.0 ghz ? 12.5 dbm typical p1 db at 1.0 ghz ? 8.5 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? hermetic gold-ceramic microstrip package 70 mil package description the MSA-0470 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, high reliability package. this mmic is designed for use as a general purpose 50 gain block. typical applications include narrow and broad band if and rf amplifers in industrial and military applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metal - lization to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temper - ature and current stability also allows bias fexibility. typical biasing confguration c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3
2 MSA-0470 absolute maximum ratings parameter absolute maximum [1] device current 100 ma power dissipation [2,3] 650 mw rf input power +13 dbm junction temperature 200c storage temperature C65 to 200c thermal resistance [2,4] : jc = 115c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25c. 3. derate at 8.7 mw/c for t c > 125c. 4. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 7.5 8.5 9.5 fg p gain flatness f = 0.1 to 2.5 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 4.0 input vswr f = 0.1 to 2.5 ghz 1.7:1 output vswr f = 0.1 to 2.5 ghz 2.0:1 nf 50 noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.75 5.25 5.75 dv/dt device voltage temperature coefcient mv/c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifcations [1] , t a = 25c symbol parameters and test conditions: i d = 50 ma, z o = 50 units min. typ. max. vswr
3 MSA-0470 typical scattering parameters (z o = 50 , t a = 25c, i d = 50 ma) freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 .18 179 8.5 2.67 176 C16.4 .151 1 .10 C14 0.2 .18 179 8.5 2.67 172 C16.4 .151 2 .10 C30 0.4 .18 179 8.5 2.67 163 C16.4 .152 3 .13 C50 0.6 .17 C179 8.5 2.65 155 C16.2 .155 5 .16 C67 0.8 .16 C176 8.4 2.64 147 C16.1 .158 8 .19 C79 1.0 .16 C174 8.3 2.61 138 C15.9 .161 6 .22 C90 1.5 .16 C166 8.2 2.56 117 C15.5 .169 9 .29 C111 2.0 .21 C163 7.8 2.46 97 C14.6 .186 9 .33 C131 2.5 .26 C162 7.3 2.33 83 C13.8 .204 12 .36 C142 3.0 .32 C170 6.5 2.12 65 C13.5 .212 10 .40 C156 3.5 .37 C177 5.7 1.93 38 C13.2 .220 7 .40 C164 4.0 .40 175 4.7 1.73 33 C12.6 .234 3 .40 C170 4.5 .41 166 3.9 1.57 20 C12.4 .239 C1 .39 C173 5.0 .42 155 3.1 1.44 7 C11.9 .255 C6 .37 C176 typical performance, t a = 25c (unless otherwise noted) 0. 1 0 .3 0. 5 1 .0 3.0 6. 0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25c, i d = 50 ma. gain flat to dc v d (v ) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 2 3 4 5 6 7 1 t c = +125c t c = +25c t c = ?55c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 5 6 7 8 9 11 10 12 13 p 1 db (dbm ) g p (db) temperature (c ) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d ? =?50?ma. p 1 db ?55 ?25 +25 +85 +125 g p nf nf (db) 5 6 7 8 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz ) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz ) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 frequency (ghz) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 gh z 1.0 gh z 2.0 gh z
70 mil package dimensions 1 3 4 2 ground ground rf output and bias rf input .020 .508 .070 1.78 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05 ordering information part numbers no. of devices comments MSA-0470 100 bulk for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 2008 avago technologies, limited. all rights reserved. obsoletes 5989-2764en av02-1226en - may 14, 2008 typical performance, t a = 25c (unless otherwise noted) 0. 1 0 .3 0. 5 1 .0 3.0 6. 0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25c, i d = 50 ma. gain flat to dc v d (v ) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 2 3 4 5 6 7 1 t c = +125c t c = +25c t c = ?55c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 5 6 7 8 9 11 10 12 13 p 1 db (dbm ) g p (db) temperature (c ) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d ? =?50?ma. p 1 db ?55 ?25 +25 +85 +125 g p nf nf (db) 5 6 7 8 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz ) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz ) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 frequency (ghz) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 gh z 1.0 gh z 2.0 gh z
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